 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII 100_C Performance Specified for: Reversed Biased SOA with Inductive Loads Switching Times With Inductive Loads -- 210 ns Inductive Fall Time (Typ) Saturation Voltages Leakage Currents * * * * * (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle (c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data The MJ10000 Darlington transistor is designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line operated switchmode applications such as: Designer's Data for "Worst Case" Conditions -- The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves -- representing boundaries on device characteristics -- are given to facilitate "worst case" design. SWITCHMODE Series NPN Silicon Power Darlington Transistor Designer'sTM Data Sheet SEMICONDUCTOR TECHNICAL DATA MOTOROLA THERMAL CHARACTERISTICS MAXIMUM RATINGS REV 4 Maximum Lead Temperature for Soldering Purposes: 1/8 from Case for 5 Seconds Thermal Resistance, Junction to Case Operating and Storage Junction Temperature Range Total Power Dissipation @ TC = 25_C @ TC =100_C Derate above 25_C Base Current -- Continuous -- Peak (1) Collector Current -- Continuous -- Peak (1) Emitter Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Collector-Emitter Voltage Switching Regulators Inverters Solenoid and Relay Drivers Motor Controls Deflection Circuits Characteristic Rating v 10%. Symbol Symbol TJ, Tstg VCEO VCEV VCEX RJC 100 VEB IC ICM IB IBM PD TL 15 - 65 to + 200 Value Max 275 175 100 1 450 400 350 2.5 5 20 30 1 8 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 VOLTS 175 WATTS MJ10000 Order this document by MJ10000/D CASE 1-07 TO-204AA (TO-3) Watts W/_C _C/W Unit Unit Adc Adc Vdc Vdc Vdc Vdc _C _C 1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII III I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII III I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII I I I I I IIIIIIIIIIIIIIIIIIII I III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII III I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII MJ10000 (1) The internal Collector-to-Emitter diode can eliminate the need for an external diode to clamp inductive loads. (1) Tests have shown that the Forward Recovery Voltage (Vf) of this diode Is comparable to that of typical fast recovery rectifiers. (2) Pulse Test: Pulse Width = 300 s, Duty Cycle 2%. SWITCHING CHARACTERISTICS DYNAMIC CHARACTERISTICS ON CHARACTERISTICS (2) SECOND BREAKDOWN OFF CHARACTERISTICS (2) ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Storage Time Crossover Time Storage Time Crossover Time Inductive Load, Clamped (Table 1) Delay Time Rise Time Storage Time Fall Time Resistive Load (Table 1) Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 100 kHz) Small-Signal Current Gain (IC = 1.0 Adc, VCE = 10 Vdc, ftest = 1 MHz) Diode Forward Voltage (1) (IF = 10 Adc) Base-Emitter Saturation Voltage (IC = 10 Adc, IB = 400 mAdc) (IC = 10 Adc, IB = 400 mAdc, TC = 100_C) Collector-Emitter Saturation Voltage (IC = 10 Adc, IB = 400 mAdc) (IC = 20 Adc, IB = 1 Adc) (IC = 10 Adc, IB = 400 mAdc, TC = 100_C) DC Current Gain (IC = 5 Adc, VCE = 5 Vdc) (IC = 10 Adc, VCE = 5 Vdc) Second Breakdown Collector Current with base forward biased Emitter Cutoff Current (VEB = 8 Vdc, IC = 0) Collector Cutoff Current (VCE = Rated VCEV, RBE = 50 , TC = 100_C) Collector Cutoff Current (VCEV = Rated Value, VBE(off) = 1.5 Vdc) (VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 150_C) Collector-Emitter Sustaining Voltage (Table 1, Figure 12) IC = 2 A, Vclamp = Rated VCEX, TC = 100_C IC = 10 A, Vclamp = Rated VCEX, TC = 100_C Collector-Emitter Sustaining Voltage (Table 1) (IC = 250 mA, IB = 0, Vclamp = Rated VCEO) 2 (IC = 10 A(pk), Vclamp = Rated VCEX, IB1 = 400 mA, VBE(off) = 5 Vdc, TC = 25_C) (IC = 10 A(pk), Vclamp = Rated VCEX, IB1 = 400 mA, VBE(off) = 5 Vdc, TC = 100_C) (VCC = 250 Vdc, IC = 10 A, IB1 = 400 mA, VBE(off) = 5 Vdc, tp = 50 s, Duty Cycle 2%) Characteristic v MJ10000 MJ10000 MJ10000 v VCEO(sus) VCEX(sus) VCE(sat) VBE(sat) Symbol Motorola Bipolar Power Transistor Device Data IEBO ICER ICEV Cob hFE IS/b hfe tsv tc tsv tc Vf td tr ts tf Min 100 400 275 350 10 50 40 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- See Figure 11 0.12 0.20 1.5 1.1 Typ 1.0 0.7 3.5 1.5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 3 0.25 5 Max 325 600 400 150 5.5 3.7 0.2 0.6 3.5 2.4 2.5 2.5 1.9 3 2 -- -- -- -- 5 5 -- -- mAdc mAdc mAdc Unit Vdc Vdc Vdc Adc Vdc Vdc pF s s s s s s s s -- -- MJ10000 DC CHARACTERISTICS VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 500 300 200 hFE, DC CURRENT GAIN 100 70 50 - 55C 30 20 10 7 5 0.2 0.3 VCE = 5 V 2 3 0.5 0.7 1 57 IC, COLLECTOR CURRENT (AMP) 10 20 TJ = 150C 25C 3 TJ = 25C 2.6 IC = 5 A 10 A 15 A 20 A 2.2 1.8 1.4 1 0.02 0.03 0.2 0.3 0.5 0.7 0.05 0.07 0.1 IB, BASE CURRENT (ANP) 1 2 Figure 1. DC Current Gain Figure 2. Collector Saturation Region 2.4 IC/IB = 25 V, VOLTAGE (VOLTS) 2.8 VBE(sat) @ IC/IB = 25 VBE(on) @ VCE = 3 V 2 V, VOLTAGE (VOLTS) 2.4 1.6 TJ = - 55C 25C 150C 0.4 0.2 0.3 0.5 0.7 1 2 5 3 7 IC, COLLECTOR CURRENT (AMPS) 10 20 2 TJ = 55C 25C 1.2 1.6 25C 0.8 1.2 150C 0.8 0.2 0.3 0.5 0.7 1 2 3 57 IC, COLLECTOR CURRENT (AMP) 10 20 Figure 3. Collector Emitter Saturation Voltages Figure 4. Base-Emitter Voltage 104 103 102 TJ = 125C 100C 101 100 25C 10-1 - 0.2 75C Cob , OUTPUT CAPACITANCE (pF) VCE = 250 V IC, COLLECTOR CURRENT ( A) 1000 700 500 300 200 TJ = 25C 100 70 Cob 0 + 0.2 + 0.4 + 0.6 + 0.8 50 0.4 0.6 1 2 4 6 10 20 40 60 100 200 400 VBE, BASE-EMITTER VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 5. Collector Cutoff Region Figure 6. Output Capacitance Motorola Bipolar Power Transistor Device Data 3 MJ10000 Table 1. Test Conditions for Dynamic Performance VCEO(sus) VCEX(sus) AND INDUCTIVE SWITCHING INDUCTIVE TEST CIRCUIT 20 1 TUT 1 INPUT 2 SEE ABOVE FOR DETAILED CONDITIONS 2 Rcoil Lcoil VCC RESISTIVE SWITCHING INPUT CONDITIONS 0 1N4937 OR EQUIVALENT Vclamp RS = 0.1 PW Varied to Attain IC = 250 mA CIRCUIT VALUES Lcoil = 10 mH, VCC = 10 V Rcoil = 0.7 Vclamp = VCEO(sus) Lcoil = 180 H Rcoil = 0.05 VCC = 20 V Vclamp = Rated VCEX Value VCC = 250 V RL = 25 Pulse Width = 50 s INDUCTIVE TEST CIRCUIT OUTPUT WAVEFORMS RESISTIVE TEST CIRCUIT IC tf UNCLAMPED IC(pk) tf CLAMPED t t1 tf [ t2 t1 Adjusted to Obtain IC t1 t2 Lcoil (IC VCC Lcoil (IC pk VClamp ) pk ) 1 2 TEST CIRCUITS TUT 1 INPUT SEE ABOVE FOR DETAILED CONDITIONS 2 1N4937 OR EQUIVALENT Vclamp RS = 0.1 TUT RL VCC Rcoil Lcoil VCC VCE VCE or Vclamp t TIME t2 Test Equipment Scope -- Tektronix 475 or Equivalent SWITCHING TIMES NOTE IC 90% Vclamp tsv trv tc Vclamp 90% IB1 IB 10% Vclamp 10% IC 2% IC tfi Vclamp tti In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage waveforms since they are in phase. However, for inductive loads which are common to SWITCHMODE power supplies and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate measurements must be made on each waveform to determine the total switching time. For this reason, the following new terms have been defined. tsv = Voltage Storage Time, 90% IB1 to 10% Vclamp trv = Voltage Rise Time, 10 - 90% Vclamp tfi = Current Fall Time, 90 - 10% IC tti = Current Tail, 10 - 2% IC tc = Crossover Time, 10% Vclamp to 10% IC An enlarged portion of the turn-off waveforms is shown in Figure 7 to aid in the visual identity of these terms. TIME Figure 7. Inductive Switching Measurements 4 Motorola Bipolar Power Transistor Device Data SWITCHING TIMES NOTE (continued) For the designer, there is minimal switching loss during storage time and the predominant switching power losses occur during the crossover interval and can be obtained using the standard equation from AN-222: PSWT = 1/2 VCCIC(tc)f In general, trv + tfi tc. However, at lower test currents this relationship may not be valid. As is common with most switching transistors, resistive switching is specified at 25_C and has become a benchmark for designers. However, for designers of high frequency converter circuits, the user oriented specifications which make this a "SWITCHMODE" transistor are the inductive switching speeds (tc and tsv) which are guaranteed at 100_C. ] MJ10000 RESISTIVE SWITCHING PERFORMANCE 3 2 1 t, TIME ( s) 0.7 0.5 0.3 0.2 VBE(off) = 5 V VCC = 250 V IC/IB = 25 TJ = 25C t, TIME ( s) td tr 2 1 0.7 0.5 ts tf 0.3 0.2 VBF(off) = 5 V VCC = 250 V IC/IB = 25 TJ = 25C 1 2 3 5 7 10 IC, COLLECTOR CURRENT (AMP) 20 0.1 1 2 7 10 3 5 IC, COLLECTOR CURRENT (AMP) 20 0.1 Figure 8. Turn-On Time Figure 9. Turn-Off Time r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 D = 0.5 0.2 0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.01 0.05 0.02 0.01 0.02 SINGLE PULSE 0.05 0.1 0.2 0.5 1.0 P(pk) ZJC (t) = r(t) RJC RJC = 1.0C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) - TC = P(pk) ZJC(t) DUTY CYCLE, D = t1/t2 2.0 5.0 t, TIME (ms) 10 20 50 100 200 500 1.0 k Figure 10. Thermal Response Motorola Bipolar Power Transistor Device Data 5 MJ10000 The Safe Operating Area figures shown in Figures 11 and 12 are specified for these devices under the test conditions shown. 50 IC, COLLECTOR CURRENT (AMPS) 20 10 3.0 1.0 0.5 0.2 0.1 0.05 TC = 25C 5 ms dc BONDING WIRE LIMITED THERMALLY LIMITED SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO 100 s 1 ms 10 s SAFE OPERATING AREA INFORMATION FORWARD BIAS There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 11 is based on TC = 25_C; T J(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 11 may be found at any case temperature by using the appropriate curve on Figure 13. TJ(pk) may be calculated from the data in Figure 10. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. REVERSE BIAS 0.02 0.01 0.005 4.0 MJ10000 MJ10001 350 400 7.0 10 20 30 50 70 100 200 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 11. Forward Bias Safe Operating Area 20 IC, COLLECTOR CURRENT (AMP) TURN OFF LOAD LINE BOUNDARY FOR MJ10001. THE LOCUS FOR MJ10000 IS 50 V LESS TJ 8 16 12 v 100C VBE(off) = 5 V VBE(off) = 2 V VBE(off) = 0 V 4 0 For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as V CEX(sus) at a given collector current and represents a voltage-current condition that can be sustained during reverse biased turn-off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 12 gives the complete reverse bias safe operating area characteristics. 0 100 200 300 400 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 500 Figure 12. Reverse Bias Switching Safe Operating Area 100 POWER DERATING FACTOR (%) SECOND BREAKDOWN DERATING 80 60 THERMAL DERATING 20 0 0 40 160 80 120 TC, CASE TEMPERATURE (C) 200 Figure 13. Power Derating 6 Motorola Bipolar Power Transistor Device Data MJ10000 PACKAGE DIMENSIONS A N C -T- E D U V 2 2 PL SEATING PLANE K M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. 0.13 (0.005) L G 1 TQ M Y M -Y- H B -Q- 0.13 (0.005) M TY M DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.550 REF --- 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --- 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF --- 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --- 21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR CASE 1-07 TO-204AA (TO-3) ISSUE Z Motorola Bipolar Power Transistor Device Data 7 MJ10000 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 8 Motorola Bipolar Power Transistor Device Data *MJ10000/D* MJ10000/D |
Price & Availability of MJ10000
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |